2019
  • F. Pezzoli, Invited at the 10th International Workshop on Bismuth-Containing Semiconductors. Lattice-mismatched heterostructures based on group IV semiconductors as an advanced spin-optronics platform. 23.07.2019 Toulouse, France.
  • F. Pezzoli, Oral at the joint ISTDM/ICSI 2019 conference – 10th International SiGe Technology and Device Meeting (ISTDM), 12th International Conference on Silicon Epitaxy and Heterostructures. Optical properties of micron-sized crystals grown via 3D heteroepitaxy. 06.06.2019 Madison, USA.
  • F. Pezzoli, Oral at the joint ISTDM/ICSI 2019 conference – 10th International SiGe Technology and Device Meeting (ISTDM) 12th International Conference on Silicon Epitaxy and Heterostructures. Carrier and Spin Coherent Dynamics in Strained Germanium-Tin Semiconductor on Silicon. 05.06.2019 Madison, USA.
  • F. Pezzoli, Invited at the V National conference of physics students. Spin physics of semiconductor nanostructures: optical spectroscopy and applications. 07.03.2019 Milan, Italy.

2018
  • F. Pezzoli, Oral at the ICPS 2018 – the 34th international conference on the physics of semiconductors. Carrier and spin coherent dynamics in strained germanium-tin semiconductor on silicon. 30.07.2018 Montpellier, France.
  • F. Pezzoli, Invited at 50 years of optical orientation in semiconductors. Challenges and perspectives of optical spin orientation applied to group IV heterostructures. 19.06.2018 Paris, France.
  • E. Vitiello, Oral at the joint ISTDM/ICSI 2018 conference – International Conference on Silicon Epitaxy and Heterostructures. Optically Reconfigurable Polarized Emission in Germanium. 28.05.2018 Potsdam, Germany.
  • F. Pezzoli, Invited at ICSM 2018 – the 6th International conference on superconductivity and magnetism. Spin-Dependent Phenomena in group IV semiconductors. 01.05.2018 Antalya, Turkey.
  • F. Pezzoli, Invited. IHT-Kolloquium. Spin-Dependent Phenomena and Optical Properties of Ge-Based Heterostructures. 30.01.2018 Stuttgart, Germany
2017
  • F. Basso Basset, Oral at Italian Crystal Growth 2017. Droplet Epitaxy GaAs Nanostructures as Ideal Entangled Photon Sources for Hybrid Quantum Networking. 20.11.2017 Milano, Italy
  • F. Basso Basset, Oral at FisMat 2017. Droplet Epitaxy GaAs Nanostructures as Ideal Entangled Photon Sources for Hybrid Quantum Networking. 01.10.2017 Trieste, Italy
  • F. Pezzoli, Invited at SemiconNano 2017. Spin-dependent properties of Ge-based low-dimensional structures. 28.09.2017 Como, Italy
  • F. Basso Basset, Invited at SemiconNano 2017. Droplet epitaxy GaAs nanostructures as ideal entangled photon sources for hybrid quantum networking. 25.09.2017 Como, Italy
  • E. Vitiello, Oral at EMRS Fall Meeting 2017. Long-lived conduction electron spins in Ge quantum wells. 21.09.2017 Warsaw, Poland
  • S. De Cesari, Oral at EMRS Fall Meeting 2017. Optical Control of the Polarization of Direct-gap Transitions in Germanium. 18.09.2017 Warsaw, Poland
  • E. Vitiello, Invited at EMN Meeting on Photonics 2017. Spin-dependent direct gap emission in tensile-strained Ge films on Si substrates. 07.09.2017 Budapest, Hungary
  • F. Pezzoli, Invited at IEEE Summer Topicals Meeting. Spin-optoelectronic functionalities of group IV materials. 10.07.2017 Puerto Rico
  • F. Pezzoli, Oral at SpinTech IX. Strong confinement-induced engineering of the g-factor and lifetime of conduction electron spins in Ge quantum wells. 08.06.2017 Fukuoka, Japan
  • F. Pezzoli, Oral at the International Conference on Silicon Epitaxy and Heterostructures ICSI-10. Radiative recombination and optical spin orientation in GeSn epitaxial layers. 16.05.2017 Coventry, UK
  • E. Vitiello, Oral at the International Conference on Silicon Epitaxy and Heterostructures ICSI-10. Long-lived conduction electron spins in Ge quantum wells. 17.05.2017 Coventry, UK