Talks - lassem

F. Pezzoli, Invited at the 10th International Workshop on Bismuth-Containing Semiconductors. Lattice-mismatched heterostructures based on group IV semiconductors as an advanced spin-optronics platform. 23.07.2019 Toulouse, France.
F. Pezzoli, Oral at the joint ISTDM/ICSI 2019 conference – 10th International SiGe Technology and Device Meeting (ISTDM), 12th International Conference on Silicon Epitaxy and Heterostructures. Optical properties of micron-sized crystals grown via 3D heteroepitaxy. 06.06.2019 Madison, USA.
F. Pezzoli, Oral at the joint ISTDM/ICSI 2019 conference – 10th International SiGe Technology and Device Meeting (ISTDM) 12th International Conference on Silicon Epitaxy and Heterostructures. Carrier and Spin Coherent Dynamics in Strained Germanium-Tin Semiconductor on Silicon. 05.06.2019 Madison, USA.
F. Pezzoli, Invited at the V National conference of physics students. Spin physics of semiconductor nanostructures: optical spectroscopy and applications. 07.03.2019 Milan, Italy.

F. Pezzoli, Oral at the ICPS 2018 – the 34th international conference on the physics of semiconductors. Carrier and spin coherent dynamics in strained germanium-tin semiconductor on silicon. 30.07.2018 Montpellier, France.
F. Pezzoli, Invited at 50 years of optical orientation in semiconductors. Challenges and perspectives of optical spin orientation applied to group IV heterostructures. 19.06.2018 Paris, France.
E. Vitiello, Oral at the joint ISTDM/ICSI 2018 conference – International Conference on Silicon Epitaxy and Heterostructures. Optically Reconfigurable Polarized Emission in Germanium. 28.05.2018 Potsdam, Germany.
F. Pezzoli, Invited at ICSM 2018 – the 6th International conference on superconductivity and magnetism. Spin-Dependent Phenomena in group IV semiconductors. 01.05.2018 Antalya, Turkey.
F. Pezzoli, Invited. IHT-Kolloquium. Spin-Dependent Phenomena and Optical Properties of Ge-Based Heterostructures. 30.01.2018 Stuttgart, Germany

F. Basso Basset, Oral at Italian Crystal Growth 2017. Droplet Epitaxy GaAs Nanostructures as Ideal Entangled Photon Sources for Hybrid Quantum Networking. 20.11.2017 Milano, Italy
F. Basso Basset, Oral at FisMat 2017. Droplet Epitaxy GaAs Nanostructures as Ideal Entangled Photon Sources for Hybrid Quantum Networking. 01.10.2017 Trieste, Italy
F. Pezzoli, Invited at SemiconNano 2017. Spin-dependent properties of Ge-based low-dimensional structures. 28.09.2017 Como, Italy
F. Basso Basset, Invited at SemiconNano 2017. Droplet epitaxy GaAs nanostructures as ideal entangled photon sources for hybrid quantum networking. 25.09.2017 Como, Italy
E. Vitiello, Oral at EMRS Fall Meeting 2017. Long-lived conduction electron spins in Ge quantum wells. 21.09.2017 Warsaw, Poland
S. De Cesari, Oral at EMRS Fall Meeting 2017. Optical Control of the Polarization of Direct-gap Transitions in Germanium. 18.09.2017 Warsaw, Poland
E. Vitiello, Invited at EMN Meeting on Photonics 2017. Spin-dependent direct gap emission in tensile-strained Ge films on Si substrates. 07.09.2017 Budapest, Hungary
F. Pezzoli, Invited at IEEE Summer Topicals Meeting. Spin-optoelectronic functionalities of group IV materials. 10.07.2017 Puerto Rico
F. Pezzoli, Oral at SpinTech IX. Strong confinement-induced engineering of the g-factor and lifetime of conduction electron spins in Ge quantum wells. 08.06.2017 Fukuoka, Japan
F. Pezzoli, Oral at the International Conference on Silicon Epitaxy and Heterostructures ICSI-10. Radiative recombination and optical spin orientation in GeSn epitaxial layers. 16.05.2017 Coventry, UK
E. Vitiello, Oral at the International Conference on Silicon Epitaxy and Heterostructures ICSI-10. Long-lived conduction electron spins in Ge quantum wells. 17.05.2017 Coventry, UK