2019
- S. K. Dhayalan, T. Nuytten, G. Pourtois, E. Simoen, F. Pezzoli, E. Cinquanta, E. Bonera, R Loo, E. Rosseel, A. Hikavyy, Y. Shimura and W. Vandervorst, Insights into the C distribution in Si:C/Si:C:P and the annealing behaviour of Si:C layers. Physical Review B 99, 035202 (2019). ECS J. Solid State Sci. Technol. 8, P209-P216 (2019).
- S. De Cesari, A. Balocchi, E. Vitiello, P. Jahandar, E. Grilli, T. Amand, X. Marie, M. Myronov and F. Pezzoli, Spin-coherent dynamics and carrier lifetime in strained Ge1-xSnx semiconductors on silicon. Physical Review B 99, 035202 (2019).
2018
- M. Montanari, M. Virgilio, C. L. Manganelli, P. Zaumseil, M. H. Zoellner, Y. Hou, M. A. Schubert, L. Persichetti, L. Di Gaspare, M. De Seta, E. Vitiello, E. Bonera, F. Pezzoli, and G. Capellini, Photoluminescence study of interband transitions in few-layer, pseudomorphic, and strain-unbalanced Ge/GeSi multiple quantum wells. Physical Review B 98, 195310 (2018).
- S. De Cesari, R. Bergamaschini, E. Vitiello, A. Giorgioni and F. Pezzoli, Optically reconfigurable polarized emission in Germanium. Scientific Reports 8, 11119 (2018). Highlighted in Le Scienze.
- R. , Critical strain for Sn incorporation into spontaneously graded Ge/GeSn core/shell nanowires. Nanoscale 10, 7250-7256 (2018).
- F. Basso Basset, S. Bietti, M. Reindl, L. Esposito, A. Fedorov, D. Huber, A. Rastelli, E. Bonera, R. Trotta, S. Sanguinetti, High-yield fabrication of entangled photon emitters for hybrid quantum networking by high temperature droplet epitaxy. Nano Letters 18, 505-512 (2018).
2017
- F. Isa, A. Jung, M. Salvalaglio, Y. Arroyo, R. Dasilva I. Marozau, M. Meduňa, M. Barget, A. Marzegalli, G. Isella, R. Erni, F. Pezzoli, E. Bonera, P. Niedermann, O. Sereda, P. Gröning, F. Montalenti and H. von Känel, Strain Engineering in Highly Mismatched SiGe/Si Heterostructures. Materials Science in Semiconductor Processing 70, 117-122 (2017).
- S. De Cesari, E. Vitiello, A. Giorgioni and F. Pezzoli, Progress towards Spin-Based Light Emission in Group IV Semiconductors. Electronics 6, 19 (2017). Feature Paper.
- A. Marzegalli, A. Cortinovis, F. Basso Basset, E. Bonera, F. Pezzoli, A. Scaccabarozzi, F. Isa, G. Isella, P. Zaumseil, G. Capellini, T. Schroeder and Leo Miglio, Exceptional thermal strain reduction by a tilting pillar architecture: Suspended Ge layers on Si(001). Materials & Design 116, 144-151 (2017) .
2016
- A. Giorgioni, S. Paleari, S. Cecchi, E. Vitiello, E. Grilli, G. Isella, W. Jantsch, M. Fanciulli and F. Pezzoli, Strong confinement-induced engineering of the g factor and lifetime of conduction electron spins
in Ge quantum wells. Nature Communications 7, 13886 (2016). - F. Pezzoli, A. Giorgioni, D. Patchett and M. Myronov, Temperature-Dependent Photoluminescence Characteristics of GeSn Epitaxial Layers. ACS Photonics 3, 2004−2009 (2016).
- Pezzoli, A. Giorgioni, K. Gallacher, F. Isa, P. Biagioni, R. W. Millar, E. Gatti, E. Grilli, E. Bonera, G. Isella,
D. J. Paul and Leo Miglio, Disentangling nonradiative recombination processes in Ge micro-crystals
on Si substrates. Applied Physics Letters 108, 262103 (2016). Highlighted as an editor’s pick. - S. Vangelista, E. Cinquanta, C. Martella, M. Alia, M. Longo, A. Lamperti, R. Mantovan, F. Basso Basset, F. Pezzoli and A. Molle, Towards a uniform and large-scale deposition of MoS2 nanosheets via sulfurization of ultra-thin Mo-based solid films. Nanotechnology 27 175703 (2016).
- F. Isa, M. Salvalaglio, Y. Arroyo Rojas Dasilva , M. Meduňa, M. Barget, A. Jung, T. Kreiliger, G. Isella, R. Erni, F. Pezzoli, E. Bonera, P. Niedermann, P. Gröning, F. Montalenti and H. von Känel, Highly Mismatched, Dislocation-Free SiGe/Si Heterostructures. Advanced Materials 28, 884–888 (2016).
- F. Isa, A. Jung, M. Salvalaglio, Y. Arroyo Rojas Dasilva, M. Meduňa, M. Barget, T. Kreiliger, G. Isella, R. Erni, F. Pezzoli, E. Bonera, P. Niedermann, K. Zweiacker, A. Neels, A. Dommann, P. Gröning, F. Montalenti and H. von Känel, Elastic and Plastic Stress Relaxation in Highly Mismatched SiGe/Si Crystals. MRS Advances 1, 3403-3408 (2016).